5.5×7.5inch Aluminum Nitride Ceramic Used for IGBT module
Product Description:
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.Aluminum Nitride (AlN) Ceramics have high thermal conductivity and good insulation which is suitable for IGBT module.
Our Aluminum Nitride substrates (AlN) are available in various sizes and thicknesses. Thanks to a large and live inventory, we can ship your part fast for you to start your project.
Our Service:
Please contact us for customization. We can also supply Aluminum Nitride(AlN) Ceramic with thermal conductivity up to 230W/mK.
| Dimension(LxW) |
140mm x 190 mm etc. |
| Thickness |
0.38-1.5 mm |
| Thermal Conductivity |
170W/m.K |
| Dielectric Constant |
8-9(mHz) |
| Bulk Density |
3.3 g/cm³ |
| Surface Roughness |
Ra < 0.6 μm on both sides |
Company Adavatage:
Huaqing founded in 2004, with sum investment of 80Million RMB, registered capital 40Million RMB. Huaqing's AlN & Al2O3 ceramic products have high thermal-conductivity, low dielectric constant, good dissipation factor and excellent mechanical property compared with the other factories in the industry. AlN & Al2O3 ceramic are widely used in HBLED, opto-communication, IGBT, power devices, TEC and the other high-end applications.
Workshop & Equipment:
Packaging & Delivery:
Deliver by UPS, DHL, Fedex etc.
