Description:

• 1306351A 1729 0402 Designed to provide more accurate process control and more targeted and efficient power delivery, eVoS delivers the precise bias plasma performance for high-aspect-ratio (HAR) structures at high speeds. eVoS features customizable and direct ion energy selection. Unlike traditional sinusoidal RF power sources, eVoS enables the production of near mono-energetic ion energy distributions (IEDs) that deliver power only where the plasma needs it. This, in turn, delivers maximum efficiency with the least wasted energy.

•    eVoS breaks a trend that has been pushing RF power requirements up to 100 kW per plasma chamber and as much as 1MW per etcher for HAR applications. Using eVoS results in half or even a third of the power consumption. Employing eVoS in a NAND fab with 180 etchers has the potential to reduce overall power consumption by as much as 120 MW.