Ti:Sapphire Crystal Titanium Doped Sapphire

Ti:Sapphire crystal is the most widely used tunable solid-state laser material combining the supreme physical and optical properties with the extremely broad lasing range. Its lasing bandwidth can support pulses < 10fs making it the crystal of choice for femtosecond mode-locked oscillators and amplifiers. The absorption band of Ti:Sapphire centers at ~ 490 nm so it may be conveniently pumped by various laser sources such as argon ion lasers or frequency doubled Nd:YAG, Nd:YLF, Nd:YVO4 lasers at ~530nm.

Laser designers are using Ti:sapphire to generate femtosecond pulses to create new industrial tools. A properly delivered femtosecond laser pulse interacts within the target leaving the surrounding area undisturbed. Newly developed femtosecond pulsed lasers micro-machine complex fine structures in glass, metal and other materials. Active waveguides can be written below the surface, integrating optical devices within the body of a substrate. Defects in photomasks can be repaired without disturbing neighbouring patterns. And it is now possible to achieve cellular resolution in vivo for medical diagnosis with femtosecond pulse lasers.



Descriptions:


Ti:Sapphire Crystal Titanium Doped Sapphire is the most widely used tunable solid-state laser material. Its lasing bandwidth can support pulses < 10fs making it the crystal of choice for femtosecond mode-locked oscillators and amplifiers. The absorption band of Ti:Sapphire centers at ~ 490 nm so it may be conveniently pumped by various laser sources such as argon ion lasers or frequency doubled Nd:YAG, Nd:YLF, Nd:YVO4 lasers at ~530nm.



Applications:

1) Femtosecond Pulse Laser Material.

2) Tunable Output - 650 nm to 1100 nm.

3) Excellent Output Efficiency

4) Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193 nm ) laser with ultrafast pulses below 10fs.

5) Ti:Sapphire is also widely used as the pump source of OPOs to expand the tunable range.


Optical and spectral properties of Tisapphire

Absorption range

400 - 600 nm

Tuning range

660 - 1050 nm

Emission peak

795 nm

Absorption peak

488 nm

Absorption cross-section at peak wavelength

38×10-20 cm2

Emission Cross-section

Σ532nm = 4.9 x 10-20 cm2

Emission Cross-section

Σ490nm = 6.4 x 10-20 cm2

Emission cross-section

Σ790nm = 41×10-20 cm2

dn/dT

13×10-6 K-1

Thermal conductivity

33 Wm-1K-1

Laser action

4-level vibronic

Fluorescence lifetime

3.2 µs (T=300K)

Refractive index

1.76 @ 800 nm

Chemical formula

Ti3+:Al2O3

Crystal structure

Hexagonal a=4.758, c=12.991

Density

3.98 g/cm3

Melting point

2040

Mohs hardness

9


HGO offers Tisapphire specifications:

Orientation:

Optical axis C normal to rod axis

Ti2O3 concentration:

0.03 - 0.25wt %

Figure Of Merit (FOM):

100~250 Upon customers request

End configurations:

Flat/Flat or Brewster/Brewster ends

Flatness:

l /8 ~1/10@ 633 nm

Parallelism:

10 arc sec

Surface finishing:

10/5 scratch/dig to MIL-O-13830A

Clear Aperture:

> 90%

Chamfer:

< 0.1 mm @ 45deg.

Size

Upon customer request

Coating

AR/HR coating upon customer’s request

Damage Threshold

750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz

Quality Warranty Period

One year under proper use


Why Choose HGO ?

HG OPTRONICS.,INC. supplies very high quality of Titanium doped sapphire laser crystals. Based on HGO’s high processing techniques, high precision Ti-sapphire with high surface quality and as high as 1/10 flatness is available. The crystals are available in sizes from 2mm to 60mm diameter or diagonal dimension and with path length from 2mm to over 100mm long.

What is more, Tisapphire based diffusion bonding configurations are also vailable to supply especially in the form of pure sapphire /Tisapphire diffusion bonding.




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