ZnO material is a kind of direct band gap wide gap semiconductor material. It is a kind of multifunctional crystal with luminescence, electro-optic, scintillation, semiconductor and other properties. It is an excellent substrate material for ZnO, Gan epitaxial films and devices. It has great development potential in short wavelength light-emitting devices, such as LEDs and LDS, and has become another research hotspot in the field of wide gap semiconductor after Gan.
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Purity wt%
Impurity: wt%
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> 99.99
Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002
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Crystal Structure
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Hexagonal: a= 3.252Å, c = 5.313Å
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Growth Method
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Hydrothermal
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Hardness
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4 moh scale
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Density
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5.7 g/cm3
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Melt Point
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1975 oC
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Specific Heat
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0.125 cal/gm
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Thermoelectric Constant
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1200 mV /oK @ 300 oC
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Thermal Conductivity
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0.006 cal/cm/ oK
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Thermal Expansion
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2.90 x 10-6/oK
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Transmission Range
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0.4 - 0.6 m > 50% at 2 mm
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Dislocation Density
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<0001> plane <100 / cm2
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